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IGBT Transistor

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For Jeking RJP63K2 IGBT Transistor in TO-263 Agency Supplied Reliable Performance

Description

Jeking IGBT Transistor TO-263 RJP63K2 Type Reliable Performance
product for jeking rjp63k2 igbt transistor in to 263 agency supplied reliable performance-2
Item
Jeking IGBT Transistor TO-263 RJP63K2 Type Reliable Performance
Type
The RJP63K2 is an N-channel IGBT produced by Renesas Electronics, specifically designed for high-speed power switching applications. It features low on-state voltage drop (typical V_CE(sat) = 1.9V) and high switching speed (rise time of 60ns and
fall time of 200ns).
Voltage withstand range:
Supports high voltage applications, with the drain-to-source breakdown voltage (VDSS) not explicitly
stated, but similar devices typically cover ratings above 600V.
Low leakage current:
ICES ≤ 1μA (maximum), suitable for low-power designs
Application
Power switch circuit: Suitable for high-frequency power switching scenarios such as switch-mode power supplies and inverters, utilizing its low-loss characteristics to improve efficiency;
Motor drive: Used in motor control modules (such as variable
frequency drives), supporting high-speed PWM modulation and current control.
Working temperature
-40~+85 ℃
Part number
RJP63K2
Mounting Style
through hole
Package/case
TO-220FL
Products Details
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