Item |
High Quality Liquid crystal plasma field effect transistor TO-220 RJP63K2 |
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Type |
The RJP63K2 is an N-channel IGBT produced by Renesas Electronics, specifically designed for high-speed power switching applications. It features low on-state voltage drop (typical V_CE(sat) = 1.9V) and high switching speed (rise time of 60ns and fall time of 200ns). |
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Voltage withstand range: |
Supports high voltage applications, with the drain-to-source breakdown voltage (VDSS) not explicitly stated, but similar devices typically cover ratings above 600V. |
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Low leakage current: |
ICES ≤ 1μA (maximum), suitable for low-power designs |
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Application |
Power switch circuit: Suitable for high-frequency power switching scenarios such as switch-mode power supplies and inverters, utilizing its low-loss characteristics to improve efficiency;
Motor drive: Used in motor control modules (such as variable
frequency drives), supporting high-speed PWM modulation and current control. |
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Working temperature |
-40~+85 ℃ |
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Part number |
RJP63K2 |
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Mounting Style |
through hole |
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Package/case |
TO-220FL |
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