High Quality RJP63K2 Liquid Crystal Plasma Field Effect Transistor TO-220 from Agency Supplier

High Quality Liquid crystal plasma field effect transistor TO-220 RJP63K2

Item	High Quality Liquid crystal plasma field effect transistor TO-220 RJP63K2
Type	The RJP63K2 is an N-channel IGBT produced by Renesas Electronics, specifically designed for high-speed power switching applications. It features low on-state voltage drop (typical V_CE(sat) = 1.9V) and high switching speed (rise time of 60ns and fall time of 200ns).
Voltage withstand range:	Supports high voltage applications, with the drain-to-source breakdown voltage (VDSS) not explicitly stated, but similar devices typically cover ratings above 600V.
Low leakage current:	ICES ≤ 1μA (maximum), suitable for low-power designs
Application	Power switch circuit: Suitable for high-frequency power switching scenarios such as switch-mode power supplies and inverters, utilizing its low-loss characteristics to improve efficiency; Motor drive: Used in motor control modules (such as variable frequency drives), supporting high-speed PWM modulation and current control.
Working temperature	-40~+85 ℃
Part number	RJP63K2
Mounting Style	through hole
Package/case	TO-220FL